Briefly describe each process and the relative advantages of each.
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CASE STUDY
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This assignment consists of a written report of approximately 1000 words and
any diagrams in which you are asked to critically compare different process
methods used to achieve the same result and show an awareness of current
developments in semiconductor fabrication.
QUESTION
In the production of a CMOS gate the required doping may be achieved by
thermal diffusion or by ion implantation
Briefly describe each process and the relative advantages of each.
Identify which process is used in the various doping stages in the production of
a CMOS gate.
Explain the effect upon doping methods as feature sizes in modern devices fall
to well below the sub- micron feature size.
joyce
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